The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Jan. 21, 2004
Liang-gi Yao, Hsin-Chu, TW;
Tien-chih Chang, Taipei, TW;
Ming-fang Wang, Taichung, TW;
Shih-chang Chen, Hsin-Chu, TW;
Mong-song Liang, Hsin-Chu, TW;
Liang-Gi Yao, Hsin-Chu, TW;
Tien-Chih Chang, Taipei, TW;
Ming-Fang Wang, Taichung, TW;
Shih-Chang Chen, Hsin-Chu, TW;
Mong-Song Liang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
At least one high-k device, and a method for forming the at least one high-k device, comprising the following. A structure having a strained substrate formed thereover. The strained substrate comprising at least an uppermost strained-Si epi layer. At least one dielectric gate oxide portion over the strained substrate. The at least one dielectric gate oxide portion having a dielectric constant of greater than about 4.0. A device over each of the at least one dielectric gate oxide portion to complete the least one high-k device. A method of forming the at least one high-k device.