The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Jan. 05, 2006
Douglas L. Keil, Fremont, CA (US);
Wan-lin Chen, Sunnyvale, CA (US);
Eric A. Hudson, Berkeley, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Mark H. Wilcoxson, Piedmont, CA (US);
Andrew D. Bailey, Iii, Pleasanton, CA (US);
Douglas L. Keil, Fremont, CA (US);
Wan-Lin Chen, Sunnyvale, CA (US);
Eric A. Hudson, Berkeley, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Mark H. Wilcoxson, Piedmont, CA (US);
Andrew D. Bailey, III, Pleasanton, CA (US);
LAM Research Corporation, Fremont, CA (US);
Abstract
A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.