The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Jun. 02, 2006
Sergio Edelstein, Los Gatos, CA (US);
Eric F. Bouche, Pleasanton, CA (US);
Jianou Shi, Milpitas, CA (US);
Shiyou Pei, Saratoga, CA (US);
Xiafang Zhang, San Jose, CA (US);
Sergio Edelstein, Los Gatos, CA (US);
Eric F. Bouche, Pleasanton, CA (US);
Jianou Shi, Milpitas, CA (US);
Shiyou Pei, Saratoga, CA (US);
Xiafang Zhang, San Jose, CA (US);
KLA-Tencor Technologies Corporation, Milpitas, CA (US);
Abstract
A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.