The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Jan. 03, 2006
Ta-chuan Yeh, Taipei, TW;
Ni-min Chung, Nan-Tou Hsien, TW;
Kao-su Huang, Tainan Hsien, TW;
Yung-chang Lin, Tai-chung Hsien, TW;
Ruey-chyr Lee, Tai-chung, TW;
Chien-kuo Wang, Tainan Hsien, TW;
Ta-Chuan Yeh, Taipei, TW;
Ni-Min Chung, Nan-Tou Hsien, TW;
Kao-Su Huang, Tainan Hsien, TW;
Yung-Chang Lin, Tai-chung Hsien, TW;
Ruey-Chyr Lee, Tai-chung, TW;
Chien-Kuo Wang, Tainan Hsien, TW;
United Microelectonics Corp., Hsin-Chu, TW;
Abstract
A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile