The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Aug. 21, 2003
Kevin L. Beaman, Boise, ID (US);
Ronald A. Weimer, Bosie, ID (US);
Lyle D. Breiner, Meridian, ID (US);
Er-xuan Ping, Meridian, ID (US);
Trung T. Doan, Bosie, ID (US);
Cem Basceri, Bosie, ID (US);
David J. Kubista, Nampa, ID (US);
Lingyi A. Zheng, Bosie, ID (US);
Kevin L. Beaman, Boise, ID (US);
Ronald A. Weimer, Bosie, ID (US);
Lyle D. Breiner, Meridian, ID (US);
Er-Xuan Ping, Meridian, ID (US);
Trung T. Doan, Bosie, ID (US);
Cem Basceri, Bosie, ID (US);
David J. Kubista, Nampa, ID (US);
Lingyi A. Zheng, Bosie, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a batch process. One implementation involves pretreating a surface of a process chamber by contemporaneously introducing first and second pretreatment precursors (e.g., TiCland NH) to deposit a pretreatment material on a the chamber surface. After the pretreatment, the first microfeature workpiece may be placed in the chamber and TiN may be deposited on the microfeature workpiece by alternately introducing quantities of first and second deposition precursors.