The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
May. 31, 2005
Eiichi Mizuno, Shizuoka, JP;
Narishi Gonohe, Shizuoka, JP;
Masamichi Harada, Shizuoka, JP;
Nobuyuki Kato, Shizuoka, JP;
Eiichi Mizuno, Shizuoka, JP;
Narishi Gonohe, Shizuoka, JP;
Masamichi Harada, Shizuoka, JP;
Nobuyuki Kato, Shizuoka, JP;
Ulvac Inc., Chigasaki-shi, JP;
Abstract
A method for forming a tungsten nitride film including a first material gas supply step of supplying a first material gas composed of a tungsten compound gas, a reduction step of supplying a reducing gas, a second material gas supply step of supplying a second material gas composed of a tungsten compound gas, and a nitridation step of supplying a nitriding gas. Since a step of depositing tungsten on a substrate, and a step of forming tungsten nitride are performed separately, by varying the flow rate of each gas, the pressure when each gas is supplied, and the supply time, or the number of times each step is performed and the order in which the steps are performed, the quantity of tungsten deposited and the quantity of tungsten nitride formed can be controlled easily.