The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Apr. 11, 2006
Yung-chang Lin, Tai-Chung Hsien, TW;
Sun-chieh Chien, Hsin-Chu, TW;
Chien-li Kuo, Hsin-Chu, TW;
Ruey-chyr Lee, Tai-Chung, TW;
Yung-Chang Lin, Tai-Chung Hsien, TW;
Sun-Chieh Chien, Hsin-Chu, TW;
Chien-Li Kuo, Hsin-Chu, TW;
Ruey-Chyr Lee, Tai-Chung, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A trench capacitor structure includes a semiconductor substrate comprising thereon a STI structure. A capacitor deep trench is etched into the semiconductor substrate. Collar oxide layer is disposed on inner surface of the capacitor deep trench. A first doped polysilicon layer is disposed on the collar oxide layer and on the exposed bottom of the capacitor deep trench. A capacitor dielectric layer is formed on the first doped polysilicon layer. A second doped polysilicon layer is formed on the capacitor dielectric layer. A deep ion well is formed in the semiconductor substrate, wherein the deep ion well is electrically connected with the first doped polysilicon layer through the bottom of the capacitor deep trench. A passing gate insulation (PGI) layer is formed on the second doped polysilicon layer and on the STI structure.