The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Oct. 28, 2005
Hui-lin Chang, HsinChu, TW;
Yung-cheng LU, Taipei, TW;
Chung-chi Ko, Jushan Township, Nantou County, TW;
Pi-tsung Chen, Jiangjyun Township, Tainan County, TW;
Shau-lin Shue, Hsinchu, TW;
Chien-hsueh Shih, Taipei, TW;
Hung-wen Su, Jhubei, TW;
Ming-hsing Tsai, Chu-Pei, TW;
Hui-Lin Chang, HsinChu, TW;
Yung-Cheng Lu, Taipei, TW;
Chung-Chi Ko, Jushan Township, Nantou County, TW;
Pi-Tsung Chen, Jiangjyun Township, Tainan County, TW;
Shau-Lin Shue, Hsinchu, TW;
Chien-Hsueh Shih, Taipei, TW;
Hung-Wen Su, Jhubei, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Semiconductor devices and methods for fabricating the same. The devices include a substrate, a catalyst layer, a second dielectric layer, and carbon nanotubes (CNTs). The substrate comprises an overlying first dielectric layer with an electrode embedded therein. The catalyst layer overlies the electrode and the first dielectric layer and substantially comprises Co and M, wherein Mis selected from a group consisting of W, P, B, Bi, Ni, and a combination thereof. The second dielectric layer overlies the catalyst layer and comprises an opening exposing parts of the catalyst layer. The carbon nanotubes (CNTs) are disposed on the exposed catalyst layer and electrically connect the electrode.