The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
May. 17, 2005
Kartik Ramaswamy, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Kai MA, Mountain View, CA (US);
Vijay Parihar, Fremont, CA (US);
Dean Jennings, Beverly, MA (US);
Abhilash J. Mayur, Salinas, CA (US);
Amir Al-bayati, San Jose, CA (US);
Andrew Nguyen, San Jose, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Kai Ma, Mountain View, CA (US);
Vijay Parihar, Fremont, CA (US);
Dean Jennings, Beverly, MA (US);
Abhilash J. Mayur, Salinas, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Andrew Nguyen, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.