The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Aug. 08, 2005
Kartik Ramaswamy, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Kenneth S Collins, San Jose, CA (US);
Kai MA, Mountain View, CA (US);
Vijay Parihar, Fremont, CA (US);
Dean Jennings, Beverly, MA (US);
Abhilash J. Mayur, Salinas, CA (US);
Amir Al-bayati, San Jose, CA (US);
Andrew Nguyen, San Jose, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Kenneth S Collins, San Jose, CA (US);
Kai Ma, Mountain View, CA (US);
Vijay Parihar, Fremont, CA (US);
Dean Jennings, Beverly, MA (US);
Abhilash J. Mayur, Salinas, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Andrew Nguyen, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.