The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Dec. 18, 2002
Yi-lung Cheng, Taipei, TW;
Mo-chen Liao, Yunlin, TW;
Eric Tsai, Yunlin, TW;
Sze-au Wu, Yunlin, TW;
Ying-lung Wang, Tai-Chung County, TW;
Yi-Lung Cheng, Taipei, TW;
Mo-Chen Liao, Yunlin, TW;
Eric Tsai, Yunlin, TW;
Sze-Au Wu, Yunlin, TW;
Ying-Lung Wang, Tai-Chung County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method and reactant gas bypass system for carrying out a plasma enhanced chemical vapor deposition (PECVD) process with improved gas flow stability to avoid unionized reactant precursors and thickness non-uniformities the method including providing a semiconductor process wafer having a process surface within a plasma reactor chamber for carrying out at least one plasma process; supplying at least one reactant gas flow at a selected flow rate to bypass the plasma reactor chamber for a period of time to achieve a pre-determined flow rate stability; and, redirecting the at least one reactant gas flow into the plasma reactor chamber to carry out the at least one plasma process.