The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Jan. 07, 2004
Lutz Aschke, Mainz, DE;
Markus Schweizer, Klein-Winternheim, DE;
Jochen Alkemper, Klein-Winternheim, DE;
Axel Schindler, Grossbothen, DE;
Frank Frost, Leipzig, DE;
Thomas Haensel, Naunhof, DE;
Renate Fechner, Leipzig, DE;
Lutz Aschke, Mainz, DE;
Markus Schweizer, Klein-Winternheim, DE;
Jochen Alkemper, Klein-Winternheim, DE;
Axel Schindler, Grossbothen, DE;
Frank Frost, Leipzig, DE;
Thomas Haensel, Naunhof, DE;
Renate Fechner, Leipzig, DE;
Schott AG, Mainz, DE;
Abstract
The invention relates to the manufacture of a substrate which is particularly suitable for EUV micro-lithography and comprises a base layer of low coefficient of thermal expansion (CTE) onto which at least one cover layer made of a semiconductor material is applied. Preferably, the cover layer is a silicon layer, preferably applied by ion beam sputtering. By an additional ion beam figuring treatment substrates of extremely accurate shape and extremely low roughness can be prepared.