The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Apr. 29, 2005
Minori Noguchi, Yokohama, JP;
Yukio Kenbo, Yokohama, JP;
Yoshitada Oshida, Fujisawa, JP;
Masataka Shiba, Yokohama, JP;
Yasuhiro Yoshitaka, Yokohama, JP;
Makoto Murayama, Fujisawa, JP;
Minori Noguchi, Yokohama, JP;
Yukio Kenbo, Yokohama, JP;
Yoshitada Oshida, Fujisawa, JP;
Masataka Shiba, Yokohama, JP;
Yasuhiro Yoshitaka, Yokohama, JP;
Makoto Murayama, Fujisawa, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a first light pattern on the substrate of the semiconductor device the first light pattern being formed by passing light through a first mask, and exposing the resist by projecting a second light pattern on the substrate, the second light pattern being formed by passing light through a second mask. In the step of exposing the resist by projecting the second light pattern, the second light pattern is formed by excimer laser light having an annular shape and passed through the second mask.