The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Nov. 21, 2005
Zhang Fan, Singapore, SG;
Zhang Bei Chao, Singapore, SG;
Liu Wuping, Singapore, SG;
Chok Kho Liep, Singapore, SG;
Hsia Liang Choo, Singapore, SG;
Lim Yeow Kheng, Singapore, SG;
Alan Cuthbertson, Newcastle Upon Tyne, GB;
Tan Juan Boon, Singapore, SG;
Zhang Fan, Singapore, SG;
Zhang Bei Chao, Singapore, SG;
Liu Wuping, Singapore, SG;
Chok Kho Liep, Singapore, SG;
Hsia Liang Choo, Singapore, SG;
Lim Yeow Kheng, Singapore, SG;
Alan Cuthbertson, Newcastle Upon Tyne, GB;
Tan Juan Boon, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A structure and method for an improved a bond pad structure. A top wiring layer and a top dielectric (IMD) layer over a semiconductor structure are provided. The buffer dielectric layer is formed over the top wiring layer and the top dielectric (IMD) layer. A buffer opening is formed in the buffer dielectric layer exposing at least of portion of the top wiring layer. A barrier layer is formed over the buffer dielectric layer, and the top wiring layer in the buffer opening. A conductive buffer layer is formed over the barrier layer. The conductive buffer layer is planarized to form a buffer pad in the buffer opening. A passivation layer is formed over the buffer pad and the buffer dielectric layer. A bond pad opening is formed in the passivation layer over at least a portion of the buffer pad. A bond pad support layer is formed over the buffer pad and the buffer dielectric layer. A bond pad layer is formed over the bond pad support layer. The bond pad layer and the bond pad support layer are patterned to form a bond pad and bond pad support.