The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Oct. 18, 2004
Masaki Kurokawa, Tokyo, JP;
Norifumi Kimura, Tokyo, JP;
Takehiko Fujita, Tokyo, JP;
Yoshikazu Furusawa, Tokyo, JP;
Katsuhiko Komori, Tokyo, JP;
Kazuhide Hasebe, Tokyo, JP;
Masaki Kurokawa, Tokyo, JP;
Norifumi Kimura, Tokyo, JP;
Takehiko Fujita, Tokyo, JP;
Yoshikazu Furusawa, Tokyo, JP;
Katsuhiko Komori, Tokyo, JP;
Kazuhide Hasebe, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.