The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Mar. 29, 2005
Applicants:
Igeta Masonobu, Fishkill, NY (US);
Cory Waida, Sand Lake, NY (US);
Gert Leusink, Saltpoint, NY (US);
Inventors:
Igeta Masonobu, Fishkill, NY (US);
Cory Waida, Sand Lake, NY (US);
Gert Leusink, Saltpoint, NY (US);
Assignee:
Tokyo Electron, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to collimated electro-magnetic (EM) radiation to anisotropically expose the film. The EM radiation can have a component having a wavelength less than about 500 nm. The EM source can include a multi-frequency source of radiation.