The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Sep. 11, 2003
Chien-hsin Lai, Kaohsiung, TW;
San-an Lin, Tainan, TW;
Kuo-en Yen, Tainan, TW;
Kuo-uei Huang, Chya-I, TW;
Chien-Hsin Lai, Kaohsiung, TW;
San-An Lin, Tainan, TW;
Kuo-En Yen, Tainan, TW;
Kuo-Uei Huang, Chya-I, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A plasma apparatus capable of adaptive impedance matching comprises a plasma reactor which can produce plasma to proceed with CVD (chemical vapor deposition) process, a bi-polar electrostatic chuck which locates inside the plasma reactor and is used to support and secure a wafer, an alternating current bias power supply which connects to the bi-polar electrostatic chuck supplies the voltage potential bias for ion-bombardment from plasma, and an impedance-matching circuit which connects the alternating current bias power supply to the bi-polar electrostatic chuck is used to balance the inner electrode power output and the outer electrode power output of the bi-polar electrostatic chuck.