Company Filing History:
Years Active: 2007
Title: **Inventor Spotlight: Kuo-Uei Huang**
Introduction
Kuo-Uei Huang, an accomplished inventor based in Chya-I, Taiwan, has made significant contributions to the field of plasma technology. His innovative work in developing advanced plasma apparatus has paved the way for advancements in chemical vapor deposition processes.
Latest Patents
Huang holds a patent for a "Plasma apparatus and method capable of adaptive impedance matching." This invention encompasses a plasma reactor designed to produce plasma for the chemical vapor deposition (CVD) process. The apparatus includes a bi-polar electrostatic chuck that securely holds a wafer, an alternating current bias power supply providing the necessary voltage potential for ion-bombardment from the plasma, and an impedance-matching circuit that balances the power output of the electrodes.
Career Highlights
Kuo-Uei Huang is currently employed at United Microelectronics Corporation, where he utilizes his expertise in plasma technology to drive innovation and research development. His passion for enhancing semiconductor manufacturing techniques has been a hallmark of his career.
Collaborations
Throughout his professional journey, Huang has collaborated with talented colleagues such as Chien-Hsin Lai and San-An Lin. These partnerships have fostered an environment of creativity and shared knowledge, leading to successful innovations in their respective fields.
Conclusion
Kuo-Uei Huang's contributions to plasma technology illustrate the importance of innovation in the semiconductor industry. His ability to develop advanced technologies provides a glimpse into the future of chemical vapor deposition and highlights the potential for further advancements in this crucial area of research.