The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Nov. 12, 2003
Frederik Bijkerk, Amsterdam, NL;
Eric Louis, Ijsselstein, NL;
Andrey E. Yakshin, Nieuwegein, NL;
Peter Cornelis Görts, Utrecht, NL;
Sebastian Oestreich, München, DE;
Lambertus Gerhardus Albertus Michael Alink, Eindhoven, NL;
Jan Verhoeven, Kockengen, NL;
Robbert Wilhelmus Elisabeth Van DE Kruijs, Geldrop, NL;
Frederik Bijkerk, Amsterdam, NL;
Eric Louis, Ijsselstein, NL;
Andrey E. Yakshin, Nieuwegein, NL;
Peter Cornelis Görts, Utrecht, NL;
Sebastian Oestreich, München, DE;
Lambertus Gerhardus Albertus Michael Alink, Eindhoven, NL;
Jan Verhoeven, Kockengen, NL;
Robbert Wilhelmus Elisabeth van de Kruijs, Geldrop, NL;
Carl Zeiss SMT AG, , DE;
Abstract
A multilayer system and its production. Multilayer systems, such as those used as mirrors in the extreme ultraviolet wavelength range, suffer contamination or oxidation during storage in air and in long-time operation, i.e. when exposed to EUV radiation in a vacuum environment with certain partial pressures of water or oxygen, which causes a serious reduction in reflectivity. The multilayer system according to the invention will have a long life with constantly high reflectivity. Their reflectivity can be enhanced by barrier layers. The multilayer systems according to the invention have protective layers comprising iridium. The multilayer systems according to the invention are produced by direct, ion-beam-supported growth of the respective layer. The multilayer systems according to the invention are not only resistant to contamination and oxidation, but can also be cleaned if necessary, without losing reflectivity. Because of their long life with constantly high reflectivity, they are particularly suitable for use in semiconductor lithography in the soft X-ray range or extreme ultraviolet wavelength range.