The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Aug. 01, 2003
Yunsang Kim, San Jose, CA (US);
Neungho Shin, San Jose, CA (US);
Heeyeop Chae, San Jose, CA (US);
Joey Chiu, Chung-Li, TW;
Yan YE, Saratoga, CA (US);
Fang Tian, Fremont, CA (US);
Xiaoye Zhao, Mountain View, CA (US);
Yunsang Kim, San Jose, CA (US);
Neungho Shin, San Jose, CA (US);
Heeyeop Chae, San Jose, CA (US);
Joey Chiu, Chung-Li, TW;
Yan Ye, Saratoga, CA (US);
Fang Tian, Fremont, CA (US);
Xiaoye Zhao, Mountain View, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and/or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier/liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 Å/min.