The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Mar. 10, 2004
Zhen-cheng Wu, Kaohsiung, TW;
Tzu-jen Chou, Taipei, TW;
Weng Chang, Taipei, TW;
Yung-cheng LU, Taipei, TW;
Syun-ming Jang, Hsinchu, TW;
Mong-song Liang, Taipei, TW;
Zhen-Cheng Wu, Kaohsiung, TW;
Tzu-Jen Chou, Taipei, TW;
Weng Chang, Taipei, TW;
Yung-Cheng Lu, Taipei, TW;
Syun-Ming Jang, Hsinchu, TW;
Mong-Song Liang, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor substrate has a first copper layer, on which an etch stop layer and a dielectric layer are successively formed. A second copper layer penetrates the dielectric layer and the etch stop layer to electrically connect to the first metal layer. The etch stop layer has a dielectric constant smaller than 3.5, and the dielectric layer has a dielectric constant smaller than 3.0.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile