The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2007
Filed:
Jan. 09, 2004
Alfred W. Mak, Union City, CA (US);
Yung-hee Yvette Lee, San Jose, CA (US);
Cynthia B. Brooks, Austin, TX (US);
Melisa J. Buie, San Jose, CA (US);
Turgut Sahin, Cupertino, CA (US);
Jian Ding, San Jose, CA (US);
Alfred W. Mak, Union City, CA (US);
Yung-Hee Yvette Lee, San Jose, CA (US);
Cynthia B. Brooks, Austin, TX (US);
Melisa J. Buie, San Jose, CA (US);
Turgut Sahin, Cupertino, CA (US);
Jian Ding, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.