The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Jun. 10, 2004
Siyi LI, Fremont, CA (US);
Helen H. Zhu, Fremont, CA (US);
Howard Dang, Milpitas, CA (US);
Thomas S. Choi, San Jose, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Siyi Li, Fremont, CA (US);
Helen H. Zhu, Fremont, CA (US);
Howard Dang, Milpitas, CA (US);
Thomas S. Choi, San Jose, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.