The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Mar. 31, 2005
Harsono Simka, Saratoga, CA (US);
Juan Dominguez, Hillsboro, OR (US);
Steven Johnston, Portland, OR (US);
Adrien Lavoie, St. Hellens, OR (US);
Kevin O'brien, Portland, OR (US);
Harsono Simka, Saratoga, CA (US);
Juan Dominguez, Hillsboro, OR (US);
Steven Johnston, Portland, OR (US);
Adrien Lavoie, St. Hellens, OR (US);
Kevin O'Brien, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.