The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2007

Filed:

Mar. 10, 2004
Applicants:

William N. Partlo, Poway, CA (US);

John Martin Algots, San Diego, CA (US);

Gerry M. Blumenstock, San Diego, CA (US);

Norbert Bowering, San Diego, CA (US);

Alexander I. Ershov, San Diego, CA (US);

Igor V. Fomenkov, San Diego, CA (US);

Xiaojiang Pan, San Diego, CA (US);

Inventors:

William N. Partlo, Poway, CA (US);

John Martin Algots, San Diego, CA (US);

Gerry M. Blumenstock, San Diego, CA (US);

Norbert Bowering, San Diego, CA (US);

Alexander I. Ershov, San Diego, CA (US);

Igor V. Fomenkov, San Diego, CA (US);

Xiaojiang Pan, San Diego, CA (US);

Assignee:

Cymer, Inc., San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 35/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.


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