Fluorinated photoresist materials with improved etch resistant properties

Abstract

A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where Rrepresents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; Rrepresents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; Rrepresents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; Rrepresents hydrogen (H), methyl (CH), trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perflourinated aliphatic group; Rrepresents trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and ORrepresents OH or at least one acid labile group selected from a tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, an acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging radiation source; and developing areas of the film to form a patterned substrate.