The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Sep. 15, 2003
Chih-yang Pai, Hsinchu, TW;
Min-hsiung Chiang, Taipei, TW;
Chen-jong Wang, Hsin Chu, TW;
Shou-gwo Wuu, Hsin-Chu, TW;
Chih-Yang Pai, Hsinchu, TW;
Min-Hsiung Chiang, Taipei, TW;
Chen-Jong Wang, Hsin Chu, TW;
Shou-Gwo Wuu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Semiconductor devices having a dual polysilicon electrode and a method of manufacturing are provided. The semiconductor devices include a first polysilicon layer deposited on a second polysilicon layer. Each polysilicon layer may be doped individually. The method also allows for some semiconductor devices on a wafer to have a single polysilicon wafer and other devices to have a dual polysilicon layer. In one embodiment, the semiconductor devices are utilized to form a memory device wherein the storage capacitors and transistors located in the cell region are formed with a dual polysilicon layer and devices in the periphery region are formed with a single polysilicon layer.