The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2007

Filed:

Nov. 19, 2003
Applicants:

Suan Jeung Boon, Singapore, SG;

Yong Poo Chia, Singapore, SG;

Meow Koon Eng, Singapore, SG;

Siu Waf Low, Singapore, SG;

Inventors:

Suan Jeung Boon, Singapore, SG;

Yong Poo Chia, Singapore, SG;

Meow Koon Eng, Singapore, SG;

Siu Waf Low, Singapore, SG;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a chip-scale package includes securing a device substrate that carries at least two adjacent semiconductor devices to a sacrificial substrate. The sacrificial substrate may include conductive elements on a surface thereof, which are located so as to align along a street between each adjacent pair of semiconductor devices on the device substrate. The device substrate is then severed along each street and the newly formed peripheral edge of each semiconductor device coated with dielectric material. If the sacrificial substrate includes conductive elements, they may be exposed between adjacent semiconductor devices and subsequently serve as lower sections of contacts. Peripheral sections of contacts are formed on the peripheral edge. Upper sections of the contacts may also be formed over the active surfaces of the semiconductor devices. Once the contacts are formed, the sacrificial substrate is substantially removed from the back sides of the semiconductor devices.


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