The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Nov. 18, 2002
Applicants:
John Macneil, Cardiff, GB;
Sajid Ishaq, Bristol, GB;
Hervé Gris, Gegre, FR;
Katherine Giles, Bristol, GB;
Inventors:
John MacNeil, Cardiff, GB;
Sajid Ishaq, Bristol, GB;
Hervé Gris, Gegre, FR;
Katherine Giles, Bristol, GB;
Assignee:
Aviza Technology Limited, Newport, Gwent, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A low k dielectric layer is formed by depositing an unset dielectric layer on a substrate, the dielectric layer including Silicon, Carbon and Oxygen. The surface of the dielectric layer exposed to an activated gas to form a semi-permeable skin on or of the surface of the layer. The layer is then cured to render at least part of the layer porous.
Published as:
WO03044843A2; AU2002343029A1; US2003124870A1; WO03044843A3; TW200400589A; TW575939B; GB0404866D0; GB2395493A; GB2395493B; JP2005510082A; US7205246B2;