Company Filing History:
Years Active: 2007
Title: The Innovative Contributions of Sajid Ishaq
Introduction
Sajid Ishaq is a notable inventor based in Bristol, GB. He has made significant contributions to the field of materials science, particularly in the development of low k dielectric layers. His innovative approach has implications for various applications in the semiconductor industry.
Latest Patents
Sajid Ishaq holds a patent for "Forming low k dielectric layers." This patent describes a method for creating a low k dielectric layer by depositing an unset dielectric layer on a substrate. The dielectric layer consists of Silicon, Carbon, and Oxygen. The surface of this dielectric layer is then exposed to an activated gas, which forms a semi-permeable skin on the surface. Following this process, the layer is cured to render at least part of it porous, enhancing its properties for electronic applications.
Career Highlights
Sajid Ishaq is currently employed at Aviza Technology Limited, where he continues to work on innovative solutions in the field of semiconductor materials. His expertise and dedication have positioned him as a valuable asset to his company and the industry at large.
Collaborations
Sajid has collaborated with notable colleagues, including John Macneil and Hervé Gris. Their combined efforts contribute to advancing technology and innovation in their respective fields.
Conclusion
Sajid Ishaq's work in forming low k dielectric layers exemplifies the importance of innovation in the semiconductor industry. His contributions not only enhance material properties but also pave the way for future advancements in technology.