The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2007

Filed:

Jun. 14, 2001
Applicants:

Yusuke Takano, Shizuoka, JP;

Kazuyo Ijima, Shizuoka, JP;

Satoru Funato, Shizuoka, JP;

Yoshio Murakami, Shizuoka, JP;

Hatsuyuki Tanaka, Shizuoka, JP;

Inventors:

Yusuke Takano, Shizuoka, JP;

Kazuyo Ijima, Shizuoka, JP;

Satoru Funato, Shizuoka, JP;

Yoshio Murakami, Shizuoka, JP;

Hatsuyuki Tanaka, Shizuoka, JP;

Assignee:

AZ Electronic Materials USA Corp., Somerville, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/30 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
Abstract

A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 Å to 500 Å in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.


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