The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Feb. 27, 2002
Akiteru Koh, Nirasaki, JP;
Toshihiro Miura, Nirasaki, JP;
Takayuki Fukasawa, Tokyo, JP;
Akitaka Shimizu, Nirasaki, JP;
Masato Kushibiki, Nirasaki, JP;
Asao Yamashita, Nirasaki, JP;
Fumihiko Higuchi, Nirasaki, JP;
Akiteru Koh, Nirasaki, JP;
Toshihiro Miura, Nirasaki, JP;
Takayuki Fukasawa, Tokyo, JP;
Akitaka Shimizu, Nirasaki, JP;
Masato Kushibiki, Nirasaki, JP;
Asao Yamashita, Nirasaki, JP;
Fumihiko Higuchi, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A tungsten silicide layer () is etched by plasma etching using Cl+Ogas as etching gas. When etching of the tungsten silicide layer () is ended substantially, etching gas is switched to Cl+O+NFand over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer () formed beneath the tungsten silicide layer () is slightly etched uniformly. Residual quantity of the polysilicon layer () can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.