The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
May. 04, 2005
Annamalai Lakshmanan, Santa Clara, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Ganesh Balasubramanian, Sunnyvale, CA (US);
Zhenjiang David Cui, San Jose, CA (US);
Daemian Raj, Sunnyvale, CA (US);
Juan Carlos Rocha-alvarez, Sunnyvale, CA (US);
Francimar Schmitt, Santa Clara, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Annamalai Lakshmanan, Santa Clara, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Ganesh Balasubramanian, Sunnyvale, CA (US);
Zhenjiang David Cui, San Jose, CA (US);
Daemian Raj, Sunnyvale, CA (US);
Juan Carlos Rocha-Alvarez, Sunnyvale, CA (US);
Francimar Schmitt, Santa Clara, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.