The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Oct. 07, 2003
Muriel Martinez, St. Egreve, FR;
Thierry Barge, Grenoble, FR;
Alain Soubie, St. Egreve, FR;
Chrystelle Lagahe-blanchard, St. Joseph de Riviere, FR;
Cécile Berne, Grenoble, FR;
Olivier Rayssac, Grenoble, FR;
Muriel Martinez, St. Egreve, FR;
Thierry Barge, Grenoble, FR;
Alain Soubie, St. Egreve, FR;
Chrystelle Lagahe-Blanchard, St. Joseph de Riviere, FR;
Cécile Berne, Grenoble, FR;
Olivier Rayssac, Grenoble, FR;
S.O.I.Tec Silicon on Insulator Technologies S.A., Bernin, FR;
Abstract
An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The cutting device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is located below the weakened area. The positioning member maintains a predetermined position of the substrate on a support. The device also includes cutting means having at least one blade for contacting the substrate and for inducing a cleaving wave into the substrate. The cutting means is operatively associated with the positioning member so that the at least one blade contacts the annular notch and the positioning member prevents movement of the substrate. The at least one blade induces a cleaving wave of sufficient intensity to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.