The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
May. 20, 2004
Chih-fu Chang, Chiayi, TW;
Yen-hsiu Chen, Tainan, TW;
Hung-jen Lin, Tainan, TW;
Ming-chu King, Hsin-Chu, TW;
Ching-hwanq Su, Hsin-Chu, TW;
Chih-mu Huang, Hsin-Chu, TW;
Yun Chang, Tainan, TW;
Chih-Fu Chang, Chiayi, TW;
Yen-Hsiu Chen, Tainan, TW;
Hung-Jen Lin, Tainan, TW;
Ming-Chu King, Hsin-Chu, TW;
Ching-Hwanq Su, Hsin-Chu, TW;
Chih-Mu Huang, Hsin-Chu, TW;
Yun Chang, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A novel, low-temperature metal deposition method which is suitable for depositing a metal film on a substrate, such as in the fabrication of metal-insulator-metal (MIM) capacitors, is disclosed. The method includes depositing a metal film on a substrate using a deposition temperature of less than typically about 270 degrees C. The resulting metal film is characterized by enhanced thickness uniformity and reduced grain agglomeration which otherwise tends to reduce the operational integrity of a capacitor or other device of which the metal film is a part. Furthermore, the metal film is characterized by intrinsic breakdown voltage (V) improvement.