The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Jan. 12, 2006
Robert David Allen, San Jose, CA (US);
Gregory Breyta, San Jose, CA (US);
Phillip Brock, Sunnyvale, CA (US);
Richard A. Dipietro, Campbell, CA (US);
Debra Fenzel-alexander, San Jose, CA (US);
Carl Larson, San Jose, CA (US);
David R. Medeiros, Kitchawan, NY (US);
Dirk Pfeiffer, Dobbs Ferry, NY (US);
Ratnam Sooriyakumaran, San Jose, CA (US);
Hoa D. Truong, San Jose, CA (US);
Gregory M. Wallraff, Morgan Hill, CA (US);
Robert David Allen, San Jose, CA (US);
Gregory Breyta, San Jose, CA (US);
Phillip Brock, Sunnyvale, CA (US);
Richard A. DiPietro, Campbell, CA (US);
Debra Fenzel-Alexander, San Jose, CA (US);
Carl Larson, San Jose, CA (US);
David R. Medeiros, Kitchawan, NY (US);
Dirk Pfeiffer, Dobbs Ferry, NY (US);
Ratnam Sooriyakumaran, San Jose, CA (US);
Hoa D. Truong, San Jose, CA (US);
Gregory M. Wallraff, Morgan Hill, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where Rrepresents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where Rrepresents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where Rrepresents hydrogen (H), methyl (CH), trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated aliphatic chain; and where Rrepresents trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.