The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Jan. 20, 2004
Shih-ho Lin, Jhubei, TW;
Chung-chang Chen, Hsin-chu, TW;
Kei-wei Chen, Taipei, TW;
Shih-tzung Chang, Taichung, TW;
Chao-lung Chen, Hsin-Chu, TW;
Po-jen Shih, Tainan, TW;
Yu-ku Lin, Hsin-Chu, TW;
Ying-lang Wang, Hsin-Chu, TW;
Shih-Ho Lin, Jhubei, TW;
Chung-Chang Chen, Hsin-chu, TW;
Kei-Wei Chen, Taipei, TW;
Shih-Tzung Chang, Taichung, TW;
Chao-Lung Chen, Hsin-Chu, TW;
Po-Jen Shih, Tainan, TW;
Yu-Ku Lin, Hsin-Chu, TW;
Ying-Lang Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An electropolishing method for removing potential device-contaminating particles from a wafer, is disclosed. The method includes immersing the wafer in an electropolishing electrolyte solution and removing defects and particles from the wafer by rotational friction between the wafer and the electrolyte solution in combination with electrolysis. The method is effective in removing particles from via openings of all sizes, including via openings having a width smaller than about 0.2 μm.