The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
May. 18, 2004
Son Van Nguyen, Los Gatos, CA (US);
Michael D. Armacost, San Jose, CA (US);
Mehul Naik, San Jose, CA (US);
Girish A. Dixit, San Jose, CA (US);
Ellie Y. Yieh, San Jose, CA (US);
Son Van Nguyen, Los Gatos, CA (US);
Michael D. Armacost, San Jose, CA (US);
Mehul Naik, San Jose, CA (US);
Girish A. Dixit, San Jose, CA (US);
Ellie Y. Yieh, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are provided for depositing a dielectric material for use as an anti-reflective coating and sacrificial dielectric material in damascene formation. In one aspect, a process is provided for processing a substrate including depositing an acidic dielectric layer on the substrate by reacting an oxygen-containing organosilicon compound and an acidic compound, depositing a photoresist material on the acidic dielectric layer, and patterning the photoresist layer. The acidic dielectric layer may be used as a sacrificial layer in forming a feature definition by etching a partial feature definition, depositing the acidic dielectric material, etching the remainder of the feature definition, and then removing the acidic dielectric material to form a feature definition.