The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
May. 17, 2005
Kartik Ramaswamy, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Kai MA, Mountain View, CA (US);
Vijay Parihar, Fremont, CA (US);
Dean Jennings, Beverly, MA (US);
Abhilash J. Mayur, Salinas, CA (US);
Amir Al-bayati, San Jose, CA (US);
Andrew Nguyen, San Jose, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Kai Ma, Mountain View, CA (US);
Vijay Parihar, Fremont, CA (US);
Dean Jennings, Beverly, MA (US);
Abhilash J. Mayur, Salinas, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Andrew Nguyen, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.