The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Aug. 20, 2003
Hiroyuki Nansei, Aizuwakamatsu, JP;
Manabu Nakamura, Aizuwakamatsu, JP;
Kentaro Sera, Aizuwakamatsu, JP;
Masahiko Higashi, Aizuwakamatsu, JP;
Yukihiro Utsuno, Aizawakamatsu, JP;
Hideo Takagi, Aizuwakamatsu, JP;
Tatsuya Kajita, Aizuwakamatsu, JP;
Hiroyuki Nansei, Aizuwakamatsu, JP;
Manabu Nakamura, Aizuwakamatsu, JP;
Kentaro Sera, Aizuwakamatsu, JP;
Masahiko Higashi, Aizuwakamatsu, JP;
Yukihiro Utsuno, Aizawakamatsu, JP;
Hideo Takagi, Aizuwakamatsu, JP;
Tatsuya Kajita, Aizuwakamatsu, JP;
Fujitsu Amd Semiconductor Limited, Aizuwakamatsu, JP;
Abstract
After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.