The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Dec. 17, 2003
Applicants:
Jacobus Johannes Beulens, Scottsdale, AZ (US);
Yuet Mei Wan, Leuven, BE;
Inventors:
Jacobus Johannes Beulens, Scottsdale, AZ (US);
Yuet Mei Wan, Leuven, BE;
Assignee:
ASM International N.V., Bilthoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2006.01); H01L 21/336 (2006.01); H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming silicon nitride nanodots that comprises the steps of forming silicon nanodots and then nitriding the silicon nanodots by exposing them to a nitrogen containing gas. Silicon nanodots were formed by low pressure chemical vapor deposition. Nitriding of the silicon nanodots was performed by exposing them to nitrogen radicals formed in a microwave radical generator, using Nas the source gas.
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