The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2006

Filed:

Mar. 12, 2001
Applicants:

Lloyd G. Burrell, Poughkeepsie, NY (US);

Edward E. Cooney, Iii, Jericho, VT (US);

Jeffrey P. Gambino, Westford, VT (US);

John E. Heidenreich, Iii, Yorktown Heights, NY (US);

Hyun Koo Lee, LaGrangeville, NY (US);

Mark D. Levy, Essex Junction, VT (US);

Baozhen LI, South Burlington, VT (US);

Stephen E. Luce, Underhill, VT (US);

Thomas L. Mcdevitt, Underhill, VT (US);

Anthony K. Stamper, Williston, VT (US);

Kwong Hon Wong, Wappingers Falls, NY (US);

Sally J. Yankee, Underhill, VT (US);

Inventors:

Lloyd G. Burrell, Poughkeepsie, NY (US);

Edward E. Cooney, III, Jericho, VT (US);

Jeffrey P. Gambino, Westford, VT (US);

John E. Heidenreich, III, Yorktown Heights, NY (US);

Hyun Koo Lee, LaGrangeville, NY (US);

Mark D. Levy, Essex Junction, VT (US);

Baozhen Li, South Burlington, VT (US);

Stephen E. Luce, Underhill, VT (US);

Thomas L. McDevitt, Underhill, VT (US);

Anthony K. Stamper, Williston, VT (US);

Kwong Hon Wong, Wappingers Falls, NY (US);

Sally J. Yankee, Underhill, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.


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