The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Dec. 08, 2003
Shyng-tsong Chen, Patterson, NY (US);
Stefanie Ruth Chiras, Peekskill, NY (US);
Matthew Earl Colburn, Hopewell Junction, NY (US);
Timothy Joseph Dalton, Ridgefield, CT (US);
Jeffrey Curtis Hedrick, Montvale, NJ (US);
Elbert Emin Huang, Tarrytown, NY (US);
Kaushik Arun Kumar, Beacon, NY (US);
Michael Wayne Lane, Cortlandt Manor, NY (US);
Kelly Malone, Poughkeepsie, NY (US);
Chandrasekhar Narayan, Hopewell Junction, NY (US);
Satyanarayana Venkata Nitta, Poughquag, NY (US);
Sampath Purushothaman, Yorktown Heights, NY (US);
Robert Rosenburg, Cortlandt Manor, NY (US);
Christy Sensenich Tyberg, Mahopac, NY (US);
Roy Rongqing Yu, Poughkeepsie, NY (US);
Shyng-Tsong Chen, Patterson, NY (US);
Stefanie Ruth Chiras, Peekskill, NY (US);
Matthew Earl Colburn, Hopewell Junction, NY (US);
Timothy Joseph Dalton, Ridgefield, CT (US);
Jeffrey Curtis Hedrick, Montvale, NJ (US);
Elbert Emin Huang, Tarrytown, NY (US);
Kaushik Arun Kumar, Beacon, NY (US);
Michael Wayne Lane, Cortlandt Manor, NY (US);
Kelly Malone, Poughkeepsie, NY (US);
Chandrasekhar Narayan, Hopewell Junction, NY (US);
Satyanarayana Venkata Nitta, Poughquag, NY (US);
Sampath Purushothaman, Yorktown Heights, NY (US);
Robert Rosenburg, Cortlandt Manor, NY (US);
Christy Sensenich Tyberg, Mahopac, NY (US);
Roy RongQing Yu, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.