The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
May. 17, 2002
Sudhir Gondhalekar, Fremont, CA (US);
Tom K. Cho, Palo Alto, CA (US);
Rolf Guenther, Monte Sereno, CA (US);
Shigeru Takehiro, Chiba, JP;
Masayoshi Nohira, Chiba, JP;
Tetsuya Ishikawa, Santa Clara, CA (US);
Ndanka O. Mukuti, Santa Clara, CA (US);
Sudhir Gondhalekar, Fremont, CA (US);
Tom K. Cho, Palo Alto, CA (US);
Rolf Guenther, Monte Sereno, CA (US);
Shigeru Takehiro, Chiba, JP;
Masayoshi Nohira, Chiba, JP;
Tetsuya Ishikawa, Santa Clara, CA (US);
Ndanka O. Mukuti, Santa Clara, CA (US);
Applied Materials, Santa Clara, CA (US);
Abstract
The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0.15, more desirably about 0.2–0.25.