The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Jun. 27, 2002
Brian Murphy, Pfarrkirchen, DE;
Reinhold Wahlich, Tittmoning, DE;
Rüdiger Schmolke, Burghausen, DE;
Wilfried Von Ammon, Hochburg/Ach, AT;
James Moreland, Portland, OR (US);
Brian Murphy, Pfarrkirchen, DE;
Reinhold Wahlich, Tittmoning, DE;
Rüdiger Schmolke, Burghausen, DE;
Wilfried Von Ammon, Hochburg/Ach, AT;
James Moreland, Portland, OR (US);
Siltronic AG, Munich, DE;
Abstract
The invention relates to a film or a layer made of semi-conducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.