The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Jun. 13, 2003
Kaushik Kumar, Beacon, NY (US);
Lawrence Clevenger, LaGrangeville, NY (US);
Timothy Dalton, Ridgefield, CT (US);
Douglas C. LA Tulipe, Danbury, CT (US);
Andy Cowley, Wappingers Falls, NY (US);
Erdem Kaltalioglu, Hsin-Chu, TW;
Jochen Schacht, Hsin-Chu, TW;
Andrew H. Simon, Fishkill, NY (US);
Mark Hoinkis, Fishkill, NY (US);
Steffen K. Kaldor, Fishkill, NY (US);
Chih-chao Yang, Beacon, NY (US);
Kaushik Kumar, Beacon, NY (US);
Lawrence Clevenger, LaGrangeville, NY (US);
Timothy Dalton, Ridgefield, CT (US);
Douglas C. La Tulipe, Danbury, CT (US);
Andy Cowley, Wappingers Falls, NY (US);
Erdem Kaltalioglu, Hsin-Chu, TW;
Jochen Schacht, Hsin-Chu, TW;
Andrew H. Simon, Fishkill, NY (US);
Mark Hoinkis, Fishkill, NY (US);
Steffen K. Kaldor, Fishkill, NY (US);
Chih-Chao Yang, Beacon, NY (US);
Infineon Technologies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).