The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2006

Filed:

Aug. 14, 2003
Applicants:

Nobuyuki Kurashima, Yokohama, JP;

Gaku Minamihaba, Kawasaki, JP;

Dai Fukushima, Sagamihara, JP;

Yoshikuni Tateyama, Oita, JP;

Hiroyuki Yano, Yokohama, JP;

Inventors:

Nobuyuki Kurashima, Yokohama, JP;

Gaku Minamihaba, Kawasaki, JP;

Dai Fukushima, Sagamihara, JP;

Yoshikuni Tateyama, Oita, JP;

Hiroyuki Yano, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/04 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is disclosed a semiconductor device comprising a substrate, a first insulating film which is provided above the substrate and has a relative dielectric constant which is at most a predetermined value, a second insulating film which is provided on a surface of the first insulating film and has a relative dielectric constant greater than the predetermined value, a wire which is provided in a recess for the wire, which is formed passing through the second insulating film and extending into the first insulating film, and a dummy wire provided in a recess for the dummy wire, which is formed passing through the second insulating film and extending into the first insulating film, and is located in a predetermined area spaced from an area where the wire is provided.


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