The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2006

Filed:

Nov. 03, 2003
Applicants:

Mark A. Neil, San Jose, CA (US);

Gian Francesco Lorusso, Fremont, CA (US);

Gabor D. Toth, San Jose, CA (US);

Varoujan Chakarian, Fremont, CA (US);

Douglas K. Masnaghetti, San Jose, CA (US);

Inventors:

Mark A. Neil, San Jose, CA (US);

Gian Francesco Lorusso, Fremont, CA (US);

Gabor D. Toth, San Jose, CA (US);

Varoujan Chakarian, Fremont, CA (US);

Douglas K. Masnaghetti, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/305 (2006.01);
U.S. Cl.
CPC ...
Abstract

One embodiment disclosed relates to a method for automated focusing of an electron image. An EF cut-off voltage is determined. In compensation for a change in the EF cut-off voltage, a focusing condition is adjusted. Adjusting the focusing condition may comprise, for example, adjusting a wafer bias voltage in correspondence to the change in cut-off voltage. Another embodiment disclosed relates to a method for automated focusing of an electron image in a scanning electron imaging apparatus. A focusing condition of a primary electron beam in a first image plane is varied so as to maximize an intensity of a secondary electron beam through an aperture in a second image plane.


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