The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Nov. 07, 2002
Yuya Toyoshima, Tokyo, JP;
Yasuhiro Mitsui, Fuchuu, JP;
Yasutsugu Usami, Tokyo, JP;
Isao Kawata, Sayama, JP;
Tadashi Otaka, Hitachinaka, JP;
Yuya Toyoshima, Tokyo, JP;
Yasuhiro Mitsui, Fuchuu, JP;
Yasutsugu Usami, Tokyo, JP;
Isao Kawata, Sayama, JP;
Tadashi Otaka, Hitachinaka, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
A light beam is emitted to a test pattern place formed in the scribe area on the wafer for height measurement, an electron beam is emitted to the test pattern place for width and contrast measurement and their correlations are stored. The three-dimensional profile of a pattern in a semiconductor device on the wafer is determined by irradiating the pattern with an electron beam to measure the width and contrast and estimating the height of the pattern by inferring from a correlation corresponding to the measured width and contrast. Thus, a three-dimensional profile measuring system and method capable of measuring the three-dimensional profile of a micropattern in a semiconductor device without cutting the wafer are provided.