The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Jun. 27, 2002
Ian Smith, Los Gatos, CA (US);
Christian Wolters, Campbell, CA (US);
Yu Guan, San Jose, CA (US);
Don Brayton, Sunland, CA (US);
Ian Smith, Los Gatos, CA (US);
Christian Wolters, Campbell, CA (US);
Yu Guan, San Jose, CA (US);
Don Brayton, Sunland, CA (US);
KLA-Tencor Technologies Corp., Milpitas, CA (US);
Abstract
Methods for forming calibration standards for an inspection system and calibration standards are provided. One method includes scanning a first and a second specimen with an optical system. Master standard particles having a lateral dimension traceable to a national or international authority or first principles measurements are deposited on the first specimen. Product standard particles are deposited on the second specimen. In addition, the method includes determining a lateral dimension of the product standard particles by comparing data generated by scanning the two specimens. One calibration standard includes particles having a lateral dimension of less than about 100 nm deposited on a specimen. A distribution of the lateral dimension has a full width at half maximum of less than about 3%. The uncertainty of the lateral dimension is less than about 2%. Therefore, the standard meets the requirements for the 130 nm technology generation of semiconductor devices.